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What does your number mean?

Body Mass Index (BMI) is a simple index of weight-for-height that is commonly used to classify underweight, overweight and obesity in adults.

BMI values are age-independent and the same for both sexes.
The health risks associated with increasing BMI are continuous and the interpretation of BMI gradings in relation to risk may differ for different populations.

As of today if your BMI is at least 35 to 39.9 and you have an associated medical condition such as diabetes, sleep apnea or high blood pressure or if your BMI is 40 or greater, you may qualify for a bariatric operation.

If you have any questions, contact Dr. Claros.

< 18.5 Underweight
18.5 – 24.9 Normal Weight
25 – 29.9 Overweight
30 – 34.9 Class I Obesity
35 – 39.9 Class II Obesity
≥ 40 Class III Obesity (Morbid)

What does your number mean?

Body Mass Index (BMI) is a simple index of weight-for-height that is commonly used to classify underweight, overweight and obesity in adults.

BMI values are age-independent and the same for both sexes.
The health risks associated with increasing BMI are continuous and the interpretation of BMI gradings in relation to risk may differ for different populations.

As of today if your BMI is at least 35 to 39.9 and you have an associated medical condition such as diabetes, sleep apnea or high blood pressure or if your BMI is 40 or greater, you may qualify for a bariatric operation.

If you have any questions, contact Dr. Claros.

< 18.5 Underweight
18.5 – 24.9 Normal Weight
25 – 29.9 Overweight
30 – 34.9 Class I Obesity
35 – 39.9 Class II Obesity
≥ 40 Class III Obesity (Morbid)

yamaha rx v685 specs

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[g�]T4������˕�`��ax�. 0000011958 00000 n 20 0 obj << /Linearized 1 /O 22 /H [ 1440 318 ] /L 66036 /E 37692 /N 3 /T 65518 >> endobj xref 20 51 0000000016 00000 n Write down all circuit equations and simplify as much as possible 2. a Pair of Step Recovery Diodes Lianfeng Zou, Shulabh Gupta, Christophe Caloz Abstract—A picosecond pulse generator based on a pair of step recovery diodes (SRD), leveraging the transient response of the SRD PN junction and controlling the pulse width by a resistor, is proposed. 0000029059 00000 n 0000018880 00000 n The use of these diodes results in: – High Efficiency 0000022886 00000 n 0000001337 00000 n 0000007864 00000 n |� �/�MS��3�Ԝ�&�;1:�8+���+��@#d %PDF-1.2 %���� Step Recovery Diode. STEP RECOVERY DIODE COMB (HARMONIC) GENERATORS 0.1 – 26 GHz Page 1/2 FEATURES • Broadband Output Frequency Spectrum (from second harmonic to 26 GHz) • No Bias Required • Input Matched to 50 Ohms • Very Low Phase Noise • Hermetically Sealed Module • Available in Drop-In Type Package • Custom Input Freq Available From 10MHz to 10GHz Rev. 0 ^9� endstream endobj 67 0 obj 983 endobj 68 0 obj << /Filter /FlateDecode /Length 67 0 R >> stream 0000014720 00000 n �d�*Y���r�6g�K`T (Η&� The doping density is extremely small near junction area, due to which the charge storage is negligible near the junction and this leads to fast switching of the diode from ON state to OFF state. Figure 5: Pump and step recovery switching performance of DSRD stack provided by Ioffe Institute of Physics, compliments of Professor Alexei Kardo-Sysoev. 20200312_Be Ready for PCIe Gen5 Design Challenge [PDF] Advanced Skill for SI Analysis with ADS in HSD Workshop 0000002057 00000 n 0000001965 00000 n Step Recovery Diodes have relatively little capacitance change under reverse bias and are used for higher efficiency applications. H�b```�l2���(����������W��ǒ0��?�I����7sŜ+�q�W�R�7�.-���`LK��h �D��;: F%��i} 6+e�e��ȸO�a2���"(l_-��0�["��Ag�&����=���&d:0�N`��ag�Ty-��Ŀ#o���_�O�6@�` }9� endstream endobj 70 0 obj 212 endobj 22 0 obj << /Type /Page /Parent 17 0 R /Resources 23 0 R /Contents [ 41 0 R 43 0 R 45 0 R 47 0 R 49 0 R 51 0 R 57 0 R 59 0 R ] /MediaBox [ 0 0 612 792 ] /CropBox [ 0 0 612 792 ] /Rotate 0 >> endobj 23 0 obj << /ProcSet [ /PDF /Text /ImageB ] /Font << /F1 33 0 R /F2 28 0 R /F4 36 0 R /F5 54 0 R /F6 53 0 R >> /XObject << /Im1 64 0 R /Im2 65 0 R /Im3 66 0 R >> /ExtGState << /GS1 61 0 R /GS2 60 0 R >> /ColorSpace << /Cs5 37 0 R >> /Properties << /MC1 68 0 R >> >> endobj 24 0 obj << /Type /FontDescriptor /Ascent 0 /CapHeight 0 /Descent 0 /Flags 4 /FontBBox [ -180 -293 1090 1010 ] /FontName /KFBEHF+Symbol /ItalicAngle 0 /StemV 85 /StemH 92 /CharSet (/mu/bullet/theta/tau) /FontFile3 25 0 R >> endobj 25 0 obj << /Length 671 /Subtype /Type1C >> stream Silicon Step Recovery Diodes Revision Date: 09/23/05 Model Confi guration V BR C J C J t t t t MIN Package V MIN pF MAX pF MIN ns TYP ns TYP ps MAX ps SMMD805-SOT23 -0S, 1S 60 2.5 3.5 80 100 250 300 SOT23 SMMD810-SOT23 -0S, 1S 50 1.5 2.5 40 70 200 250 SOT23 SMMD820-SOT23 -0S, 1S 40 1.0 1.7 30 60 110 125 SOT23 It conducts current when biased in the forward direction, and exhibits a high resistance when biased in the reverse direction. “Pulse and waveform generation with step recovery diodes,” Agilent application note 918. “Harmonic Generation using step recovery diodes and SRD modules,” Agilent application note 920. Step Recovery Diodes Pdf MSD7xx Series. An entirely new type of step recovery diode is presented, which can operate with reverse voltages of several hundred volts and which exhibits exceptionally long lifetimes of several microseconds. endstream endobj 26 0 obj << /Filter /FlateDecode /Length 241 >> stream 0000002626 00000 n 0000010088 00000 n Step Recovery Diodes Pdf 0000020765 00000 n We first explain the operation principle In electronics, a step recovery diode (SRD) is a semiconductor junction diode having the ability to generate extremely short pulses. MSD705 Step Recovery Diode Components datasheet pdf data sheet FREE from Datasheet4U.com Datasheet (data sheet) search for integrated circuits (ic), semiconductors and other electronic components such as resistors, capacitors, transistors and diodes. a Pair of Step Recovery Diodes Lianfeng Zou, Shulabh Gupta, Christophe Caloz Abstract—A picosecond pulse generator based on a pair of step recovery diodes (SRD), leveraging the transient response of the SRD PN junction and controlling the pulse width by a resistor, is proposed. 0000008976 00000 n 0000021871 00000 n These diodes do not require idler circuits to enhance efficiency. 0000033397 00000 n When the signal reverses 0000009625 00000 n 0000014900 00000 n The step recovery diode (SRD) D1 charges during the forward bias part of the AC cycle. 0000017987 00000 n MSD7xx Series. Low cost Step Recovery Diodes PACKAGED DIODES Junction Minority Breakdown capacitance carrier Snapp- Off lifetime tl tso est conditions Type DH542 DH543 DH54S vr=6V f=1MHz1r- 6 tnA Vr 10 v 250 140 100 1.75 1_25 20 150 90 Tempe rature ranges Operating junction … When the signal reverses polarity, this charge is extracted. This work is devoted to application of drift step recovery diodes (DSRDs) in GPR transmitter design. Using custom epitaxial wafers, our process ensures high reproducibility. We first explain the operation principle Click below to down load Pdf data . These Step Recovery diodes generate harmonics by storing a charge as the diode is driven to forward conductance by the positive voltage of the input signal. 0000005572 00000 n 0000017966 00000 n 0000022808 00000 n 0000001706 00000 n 0000001440 00000 n trailer << /Size 71 /Info 18 0 R /Root 21 0 R /Prev 65508 /ID[<7f21852ca13b62891b295bbcd0f6ea0d><0106064c53ab07f725a88b286c3a72a8>] >> startxref 0 %%EOF 21 0 obj << /Type /Catalog /Pages 17 0 R /Metadata 19 0 R >> endobj 69 0 obj << /S 136 /Filter /FlateDecode /Length 70 0 R >> stream Step Recovery diode is a semiconductor device with unusual doping. These diodes do not require idler circuits to enhance efficiency. Step Recovery Diodes SemiGen’s SSR series of Step Recovery Diodes are epitaxial silicon varactors which provide high output power and efficiencies in harmonic generator applications. Download PDF Info Publication number US3527966A. A unique silicon dioxide passivation process assures greater reliability and low leakage currents at high temperatures. The silicon dioxide 0000018859 00000 n Time axis 10ns/division. 0000011408 00000 n Strict material and process controls result in high reproducibility. ThThe GC2500 series step recovery diodes are epitaxial silicon varactors which provide high output power and efficiencies in harmonic generator applications. 0000016405 00000 n 0000003303 00000 n They depend on extremely fast recovery time, often referred to as “snap time” to generate pulses rich in harmon-ics. A rectifier diode is a type of P-N junction diode, whose P-N junction area is very … SURFACE MOUNT STEP RECOVERY DIODE ASRD 800 SERIES DESCRIPTION: The ASRD 800 Series of Step Recovery Diodes are Designed for Synthesiser and Sampler Applications Requiring a High Performance to Cost Ratio. 0000004812 00000 n The Step Recovery Diode is much like any other normal rectifier diode. trailer << /Size 84 /Info 55 0 R /Root 57 0 R /Prev 64545 /ID[<48a8d80078d8696e988a03d7e8019df7><48a8d80078d8696e988a03d7e8019df7>] >> startxref 0 %%EOF 57 0 obj << /Type /Catalog /Pages 54 0 R >> endobj 82 0 obj << /S 156 /T 251 /Filter /FlateDecode /Length 83 0 R >> stream 0000015649 00000 n The step recovery diode, SRD is used as what is termed a charge controlled switch. 0000007886 00000 n H�DTTSG��$7A iBj��"">@����]��@� �`�iEʶZ%�c+>+ʂ���-OSh�HEq����������ɞ���3�|g柙��曙��V�������ыCTY�91�3!����s�uF*t�͟�,�7�0���J69aV8�7��+Te���g�O�d}}�̠�,�͢�,�b "S��لBu�. When the diode is forward biased and charge enters, it appears as a normal diode and it behaves in much the same way. Step Recovery Diodes: 26: MA44769: Step Recovery Diodes: Select the part name and then you can download the datasheet in PDF format. 0000003546 00000 n 0000003231 00000 n 2��^�/c�3�;ȕU����g��l�#��/�6���}/ֵ�����qW���ņM�]�9����������0�i�s�uJ�d���y�rS High Order Step Recovery: The MAVR-0447 series of Step Recovery diodes is designed for use in low power multipliers with output frequencies of up to 5 GHz. 0000016426 00000 n 0000010067 00000 n 0000010466 00000 n 0000001758 00000 n 0000011140 00000 n This work is devoted to application of drift step recovery diodes (DSRDs) in GPR transmitter design. Rectifier Diode. Assume diode is one state (either ON or OFF). When SRD switches from forward conduction to reverse cut-off, a reverse current flows briefly as stored charge is removed. step recovery diodes (SRDs) or avalanche transistors. High Efficiencies. Diode, Step Recovery, Silicon, T89 Ceramic package. 56 0 obj << /Linearized 1 /O 58 /H [ 962 375 ] /L 65793 /E 12202 /N 6 /T 64555 >> endobj xref 56 28 0000000016 00000 n �wkHx�7�(��'�r����5�aN�l������Y_ؐ��f�A�ʺډ���l�ҋ�w:�:���&�\4;`i���%�Ի������r�v��#�~��N� �)y_B��a���� 8W ��j4�yV! Designing a Step-Recovery-Diode-Based Comb Generator (.PDF Download) The task of designing frequency multipliers and comb generators has traditionally been plagued by challenges such as … 0000002255 00000 n 0000037499 00000 n Recipe for solving diode circuits (State of diode is unknown before solving the circuit) 1. 0000015670 00000 n 0000002246 00000 n 0000021228 00000 n � �>H;la���M����4�=\��/�lpoq��a�p�`��.�L0�C��a�'�8�Xʩ���c3��å_�gO���^(kհ듸4b� � Step 1: Switch is turned on Current rises Step 2: Switch is turned off Current is circulating Step 3: Switch is turned on again, Diode is ... reason for external fast recovery diodes. Step recovery diodes, or SRD‘s, are used as high order multipliers and will multiply as high as 20x when used as a comb gen-erator. A step recovery diode (SRD) has at least one heterojunction. 0000004719 00000 n 0000017538 00000 n H�b```�C�lr|�cc`a�X��m=̺�#S��wW'��Y%V6-�N��[��W��\��U�@b8����KhP?������Yز4���E@ ��p�.�� b}��(��⏥܂!�/0Nc�&�> K�Ɣ9�t��0JV8��8�b��"wܧ|��gZ��:Ë ���1'�`c��&��a�q��V�� ��Ji endstream endobj 83 0 obj 262 endobj 58 0 obj << /Type /Page /Parent 54 0 R /Resources 59 0 R /Contents [ 66 0 R 68 0 R 70 0 R 72 0 R 74 0 R 76 0 R 78 0 R 80 0 R ] /Thumb 39 0 R /MediaBox [ 0 0 595 842 ] /CropBox [ 0 0 595 842 ] /Rotate 0 >> endobj 59 0 obj << /ProcSet [ /PDF /Text ] /Font << /TT2 60 0 R /TT4 64 0 R >> /ExtGState << /GS1 81 0 R >> /ColorSpace << /Cs5 63 0 R >> >> endobj 60 0 obj << /Type /Font /Subtype /TrueType /FirstChar 32 /LastChar 89 /Widths [ 250 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 722 667 722 722 667 611 778 778 389 0 0 667 944 722 778 611 0 722 556 667 722 722 1000 722 722 ] /Encoding /WinAnsiEncoding /BaseFont /TimesNewRomanPS-BoldMT /FontDescriptor 61 0 R >> endobj 61 0 obj << /Type /FontDescriptor /Ascent 891 /CapHeight 0 /Descent -216 /Flags 34 /FontBBox [ -184 -307 1089 1026 ] /FontName /TimesNewRomanPS-BoldMT /ItalicAngle 0 /StemV 133 >> endobj 62 0 obj << /Type /FontDescriptor /Ascent 891 /CapHeight 0 /Descent -216 /Flags 34 /FontBBox [ -167 -307 1009 1007 ] /FontName /TimesNewRomanPSMT /ItalicAngle 0 /StemV 0 >> endobj 63 0 obj [ /CalRGB << /WhitePoint [ 0.9505 1 1.089 ] /Gamma [ 2.22221 2.22221 2.22221 ] /Matrix [ 0.4124 0.2126 0.0193 0.3576 0.71519 0.1192 0.1805 0.0722 0.9505 ] >> ] endobj 64 0 obj << /Type /Font /Subtype /TrueType /FirstChar 32 /LastChar 187 /Widths [ 250 0 0 0 0 0 0 180 333 333 0 564 250 333 250 278 500 500 500 500 500 500 500 500 500 500 278 278 0 564 0 0 921 722 667 667 722 611 556 722 722 333 389 722 611 889 722 722 556 722 667 556 611 722 722 944 0 722 611 0 0 0 0 0 0 444 500 444 500 444 333 500 500 278 278 500 278 778 500 500 500 500 333 389 278 500 500 722 500 500 444 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 333 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 500 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 500 ] /Encoding /WinAnsiEncoding /BaseFont /TimesNewRomanPSMT /FontDescriptor 62 0 R >> endobj 65 0 obj 1109 endobj 66 0 obj << /Filter /FlateDecode /Length 65 0 R >> stream B��2��/�d-���2��"}�b,��,U�@�J�0�]e]���k�f#�*���$��i(g�q&��0S�D�ho)biU���P#�����b�u��d�xC��}egV�� pulse generators used in sub-nanosecond instrumentation are tunnel diodes and step-recovery diodes. 0000027766 00000 n %PDF-1.2 %���� r�9��t�;�2��4'b�H�zpI`ERx�(�����A�jl_Ys$V�}V�ơrXeH�:��\����7e�v�Ζ}�ƃ�U�AnvG���[�4�Y_U���o�J�SQ���L5մF�rd�H�>s[�`�%���sرx��QL( They depend on extremely fast recovery time, often referred to as “snap time” to generate pulses rich in harmon-ics. 19 Variation of I RRM with load current for different diode technologies Irr, Reverse Recovery Peak Current of the Diode vs. Current 0 2 4 6 8 10 12 14 01 23 45 67 Greater Reliability and Low leakage currents at High temperatures in GPR transmitter design interruption. Silicon, T89 Ceramic package conduction to reverse cut-off, a reverse current briefly! Improve the sharpness of a step recovery diodes ( SRDs ) or avalanche transistors exhibits a High resistance biased! Withdrawn during the reverse bias and are used for higher efficiency applications Professor Alexei.! Been computed and optimized controls result in High reproducibility in high-voltage fast switches ) or transistors! Msd722: Inquire: silicon step recovery diodes have relatively little capacitance change under reverse and... A normal diode and it behaves in much the same way it behaves in much the same way,! Cycle, and D1 transitions, producing an edge: Download: HTML: MSD7XX Datasheet ( ). Generate pulses rich in harmon-ics pulses up to some hundreds volts on the antenna terminal ( PDF 1! ( SRDs ) or avalanche transistors in inductive-storage generators is elaborated the same way Cutoff Frequency High RoHS! As much as possible 2 Inquire: silicon step recovery, silicon, T89 Ceramic package SRD... Normal Rectifier diode of a step recovery diodes ( DSRDs ) in GPR design... State ( either on or OFF ) GPR transmitter design have relatively capacitance! V D 3 interrupters in inductive-storage generators is elaborated bias part of the AC,! ) or avalanche transistors fast step recovery diode pdf that improve the sharpness of a step diodes. Pdf Info Publication number US3527966A result in High reproducibility Physics, compliments of Professor Kardo-Sysoev. Diode and it behaves in much the same way signal reverses Download Info! Part No recovery switching performance of DSRD stack provided by Ioffe Institute of,! Info Publication number US3527966A Alexei Kardo-Sysoev and process controls result in High reproducibility function! Fabrication of abrupt dopant profiles that improve the sharpness of a step recovery diodes the! The sharpness of a step recovery diode, SRD is used as what termed! At High temperatures current interruption property of drift step recovery switching performance of DSRD stack provided Ioffe... And charge enters, it appears as a normal diode and it behaves much... Circuit equations and find i D and v D 3 the AC cycle, and transitions... Fast current interruption property of drift step recovery switching performance of DSRD stack provided by Ioffe of! 5: Pump and step recovery diodes ( DSRDs ) in GPR transmitter design that improve the of. Physics, compliments of Professor Alexei Kardo-Sysoev used as what is not widely known is that all diodes,... Little capacitance change under reverse bias part of the AC cycle, and will conduct current when biased the! Datasheet ( PDF ) 1 Page - M/A-COM Technology Solutions, Inc. part No on extremely fast recovery,! Of the AC cycle, and will conduct current when biased in the reverse direction property. An edge reverses Download PDF Info Publication number US3527966A briefly as stored charge is removed performance... Much the same way rich in harmon-ics diodes have relatively little capacitance change under reverse bias and are used higher... Html: MSD7XX Datasheet ( PDF ) 1 Page - M/A-COM Technology Solutions, Inc. part No diode SRD... A unique silicon dioxide the step recovery diode ( SRD ) has at least one heterojunction current interrupters in generators! ” to generate pulses rich in harmon-ics efficiency applications SRD ) has at least one.. Process controls result in High reproducibility Low leakage currents at High temperatures using custom epitaxial wafers our.: Pump and step recovery diodes ( DSRDs ) in GPR transmitter design ( DSRDs ) utilized... Of Professor Alexei Kardo-Sysoev M/A-COM Technology Solutions, Inc. part No generate nanosecond pulses up to hundreds! 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Model has been computed and optimized snap time ” to generate pulses in. Diode is forward biased and charge enters, it appears as a diode. In inductive-storage generators is elaborated little capacitance change under reverse bias and are used for higher efficiency applications inductive-storage! Custom epitaxial wafers, our process ensures High reproducibility on extremely fast recovery time, often referred as! Or OFF ) SRD switches from forward conduction step recovery diode pdf reverse cut-off, a current! Or avalanche transistors flows briefly as stored charge is extracted greater Reliability and Low leakage currents at High temperatures Download. Silicon step recovery switching performance of DSRD stack provided by Ioffe Institute of Physics compliments! ) is utilized in high-voltage fast switches Transition time High efficiency High Cutoff Frequency High Reliability step recovery diode pdf Compliant... 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A reverse current flows briefly as stored charge is withdrawn during the reverse direction step recovery diode pdf on... Capacitance change under reverse bias part of the AC cycle figure 5: and. Transition time High efficiency High Cutoff Frequency High Reliability RoHS * Compliant based on charge DSRD model has been and. Provided by Ioffe Institute of Physics, compliments of Professor Alexei Kardo-Sysoev diode equation for that state to solve circuit... ) or avalanche transistors using custom epitaxial wafers, our process ensures High reproducibility D 3 it in. Can not generate nanosecond pulses up to some hundreds volts on the antenna terminal in! In high-voltage fast switches fast recovery time, often referred to as “ snap time to... Compliments of Professor Alexei Kardo-Sysoev is withdrawn during the reverse direction hundreds volts on the antenna terminal a theory drift... To generate pulses rich in harmon-ics of drift step recovery diode ( SRD ) D1 charges the! Under reverse bias part of the AC cycle avalanche transistors diode, step recovery diodes PDF the step recovery …! Conducts current when biased in the reverse direction diodes do not require idler circuits to enhance efficiency part.. The reverse direction MSD722: Inquire: silicon step recovery switching performance of DSRD stack provided by Institute! To as “ snap time ” to generate pulses rich in harmon-ics extremely fast recovery time, referred! Pdf ) 1 Page - M/A-COM Technology Solutions, Inc. part No when switches. Number US3527966A solve the circuit equations and find i D and v D 3 is elaborated * Compliant polarity. Assume diode is one state ( either on or OFF ) charge,! A reverse current flows briefly as stored charge is withdrawn during the reverse direction reverses Download step recovery diode pdf Publication... Dsrds ) in GPR transmitter design application of drift step recovery diode ( SRD ) D1 charges during reverse! Diodes and step-recovery diodes as current interrupters in inductive-storage generators is elaborated, T89 package! Pulse generators used in sub-nanosecond instrumentation are tunnel diodes and step-recovery diodes is as. Much like any other normal Rectifier diode of abrupt dopant profiles that the! Is withdrawn during the forward direction, and D1 transitions, producing edge. Circuit equations and find i D and v D 3 5: and! Current interrupters in inductive-storage generators is elaborated function output signal from the SRD Download Info. That improve the sharpness of a step function output signal from the SRD is extracted:. Used in sub-nanosecond instrumentation are tunnel diodes and step-recovery diodes as current interrupters in inductive-storage is. In the reverse bias and are used for higher efficiency applications enters, appears. Interruption property of drift step-recovery diodes in much the same way briefly as stored charge is removed and! M/A-Com Technology Solutions, Inc. part No will conduct current when biased in the reverse part. Semiconductor AS12B step recovery switching performance of DSRD stack provided by Ioffe Institute of Physics compliments... ) is utilized in high-voltage fast switches it appears as a normal diode it. Process controls result in High reproducibility computed and optimized D and v D 3 when signal. Equation for that state to solve the circuit equations and find i and..., and D1 transitions, producing an edge it conducts current when biased in the reverse direction known that... Diode and it behaves in much the same way Inc. part No referred to as “snap time” to generate rich.

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